Reactive Ion Etch (RIE) | Oxford Plasma Lab 100 Inductively Coupled Plasma (ICP)

Oxford Instrument's Plasma Lab 100 System provides the capability to etch features on silicon wafers using plasma based gas chemistries. The instrument has dual source plasma: Inductive Couple Plasma (ICP) on top chamber and Reactive Ion Plasma source on Substrate. The tool has the ability to run ICP based deep Si etch processes. The standard gasses connected to the instrument are Ar, O2, He, CHF3, SF6, NF3, H2 and CH4.