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ToF-SIMS rasters a pulsed ion beam across an area to produce atomic, molecular, and fragment ions characteristic of the surface and near-surface region. This technique has low detection limits (low parts per million to high parts per billion for atomic species; as low as a femtomole for molecular species), excellent surface sensitivity (information depth is about 2 nanometers), and an extremely high mass resolution. While results are typically semi-quantitative, it can provide valuable insight into subtle chemical variations between similar samples.
Capabilities
- ✓Identifying the elemental composition and the chemical status near the surface (around 5 angstrom) with high sensitivity (~1ppm) and high mass resolution (~9000)
- ✓Distinguishing the different isotopes of the same element
- ✓Imaging the topography of surface using the secondary electrons
- ✓Ultra-thin depth profiling
- ✓Identification of trace-level contaminants
- ✓25 keV Bi cluster ion source
- ✓Yields a mass spectrum of the outermost 2 nm of a surface
- ✓Identifies structural units present at the surface (e.g., monomeric components and repeat units)
- ✓Provides fingerprint identification of polymers
- ✓Information on surface degradation and contamination
- ✓Spatial imaging of surface chemistry with a full mass spectrum from every pixel of an image
- ✓High mass resolution (m/Δm > 5000) and analytical sensitivity (down to high ppb)
- ✓Several thousand angstrom destructive elemental depth profiles possible with oxygen or cesium ion sputtering
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