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PECVD Dielectric - aSi, SiN, SiO2
Generic PECVD System (2025)
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PECVD system for dielectric deposition. Substrate size: Up to 200mm, Temperature: up to 400°C.
Capabilities
- ✓Silicon nitride deposition
- ✓Silicon oxide deposition
- ✓Amorphous silicon
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Available
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