Atomic Layer Deposition
Available

Atomic Layer Deposition

FIJI ALD System (2025)

Request Quote
Commercial Rate

Daily user entrance fee required. Please book in increments of 30min. ALD with Loadlock capable of Plasma or Thermal ALD. Substrate size: Up to 200mm. Substrate Temperature: up to 500C. Precursors Available: Al, Hf, Pt, Si, Nb, Ti others on request. Training is required before use.

Capabilities

  • Atomic layer deposition
  • Plasma ALD
  • Thermal ALD
  • 200mm substrate capability
  • 500°C temperature capability
  • Multiple precursors
  • Loadlock system
  • Precise thickness control

Specifications

manufacturerFIJI
substrate sizeUp to 200mm
temperatureUp to 500°C
modesPlasma or Thermal ALD
precursorsAl, Hf, Pt, Si, Nb, Ti, others on request
booking30 minute increments

Similar Instruments

PECVD Dielectric - aSi, SiN, SiO2
available
thin_film_deposition

PECVD Dielectric - aSi, SiN, SiO2

GenericPECVD System

$135.00/hr
University of Massachusetts Lowell
0.0(0)
E-Beam Evaporator
available
thin_film_deposition

E-Beam Evaporator

CHA6 Pocket System

$161.00/hr
University of Massachusetts Lowell
0.0(0)