Available
Maximum Heating rate: 50 o C/second (5 o C/second above 1000 oC) Sample size: 3â wafers or smaller or wafer fragments. Operates at room pressure.  If there is sufficient demand, it can be modified to work under a vacuum. Computer based temperature controller with spreadsheet compatible temperature recording.
Capabilities
- âLocation 328 MRL
- âRelated Research Techniques Diffusion / Annealing FurnacesFurnace Equipment
- âRelated Research Cores Micro/Nano Fabrication and Cleanroom
Specifications
| Duration in minutes | Max. Temp. in ÂșC |
| < 10 | 1100ÂșC |
| < 20 | 1000ÂșC |
| < 120 | 800ÂșC |
| Continuous | 600ÂșC |
