FijiTM 200 Gen 2

Features: Continuous Mode™ (Traditional Thermal ALD) Exposure Mode™ (High Aspect Ratio ALD) Plasma Mode™ (Plasma-Enhanced ALD) Substrate Size: up to 200 mm Substrate Temperature: 500°C 200 mm substrate heater standard; 800°C 100 mm substrate heater optional Deposition Uniformity: 1σ Uniformities; Thermal Al2O3 – 1.5% Plasma Al2O3 – 1.5% Precursors: 4 precursor lines standard; 6 precursor lines optional; Accommodates gas, liquid, or solid precursors; Individually heatable to 200°C Gases: 100 sccm Ar precursor carrier gas MFC; 200 sccm Ar plasma gas MFC; 100sccm N2 plasma gas MFC; 100 sccm O2 plasma gas MFC; 100 sccm H2 plasma gas MFC